A resistance random access memory (RRAM) with a structure of Ag/ZnMn2O4/p-Si was fabricated by magnetron sputtering meth......

由于在随机存储器方面的存在巨大应用潜力,氧化物的电阻开关效应近年来吸引了大量的研究;其中SrTiO3 (STO) 是这个研究领域的典型......

There is an urgent need for developing high performance rechargeable lithium-ions batteries (LIBs) with high charge/disc......

　　A stretchable organic digital information storage device has been demonstrated,which enables to advance the developm......

　　Resistive switching materials made of organic polymer thin films has been recognized to be a promising alternative a......